composite transistors 1 publication date: december 2003 sjj00243bed XN07651 (xn7651) silicon npn epitaxial planar type (tr1) silicon pnp epitaxial planar type (tr2) for motor drive features ? two elements incorporated into one package ? reduction of the mounting area and assembly cost by one half basic part number ? arn-5 + 2sb0970 (2sb970) absolute maximum ratings t a = 25 c marking symbol: 9w internal connection unit: mm note) the part number in the parenthesis shows conventional part number. 2.90 1.9 0.1 0.16 +0.10 ?0.06 2.8 +0.2 ?0.3 1.1 +0.3 ?0.1 1.1 0 to 0.1 +0.2 ?0.1 1.50 0.65 0.15 0.4 0.2 +0.25 ?0.05 0.95 0.30 +0.10 ?0.05 0.50 +0.10 ?0.05 0.95 6 5 4 1 32 +0.20 ?0.05 5 10 6 tr2 tr1 5 4 3 1 2 parameter symbol rating unit tr1 collector-base voltage v cbo 20 v (emitter open) collector-emitter voltage v ceo 15 v (base open) emitter-base voltage v ebo 7v (collector open) collector current i c 0.55 a peak collector current i cp 1.1 a collector current * 1 i c 0.7 a tr2 collector-base voltage v cbo ? 15 v (emitter open) collector-emitter voltage v ceo ? 10 v (base open) emitter-base voltage v ebo ? 7v (collector open) collector current i c ? 0.55 a peak collector current i cp ? 1.1 a collector current i c ? 0.7 a overall total power dissipation p t 350 mw p t * 2 750 junction temperature t j 150 c storage temperature t stg ? 55 to + 150 c 1: collector (tr1) 4: collector (tr2) 2: emitter (tr2) 5: base (tr1) 3: base (tr2) 6: emitter (tr1) eiaj: sc-74 mini6-g1 package note) * 1: t a = ? 20 c 2 c * 2: an instantaneous total power dissipation (for the single pulse of 50 ms)
XN07651 2 sjj00243bed ? tr2 electrical characteristics t a = 25 c 3 c ? tr1 parameter symbol conditions min typ max unit collector-base voltage (emitter open) v cbo i c = ? 10 a, i e = 0 ? 15 v collector-emitter voltage (base open) v ceo i c = ? 1 ma, i b = 0 ? 10 v emitter-base voltage (collector open) v ebo i e = ? 10 a, i c = 0 ? 7v collector-base cutoff current (emitter open) i cbo v cb = ? 10 v, i e = 0 ? 0.1 a forward current transfer ratio * h fe1 v ce = ? 2 v, i c = ? 0.5 a 100 350 ? h fe2 v ce = ? 2 v, i c = ? 1 a 60 collector-emitter saturation voltage * v ce(sat)1 i c = ? 0.3 a, i b = ? 8 ma ? 0.22 v v ce(sat)2 i c = ? 0.7 a, i b = ? 8 ma ? 0.6 transition frequency f t v cb = ? 10 v, i e = 50 ma, f = 200 mhz 130 mhz collector output capacitance c ob v cb = ? 10 v, i e = 0, f = 1 mhz 22 pf (common base, input open circuited) note) 1. measuring methods are based on japanese industrial standard jis c 7030 measuring methods for transistors. 2. * : pulse measurement note) 1. measuring methods are based on japanese industrial standard jis c 7030 measuring methods for transistors. 2. * 1: pulse measurement * 2: effective for the transistor with a built-in diode parameter symbol conditions min typ max unit collector-base voltage (emitter open) v cbo i c = 10 a, i e = 020v collector-emitter voltage (base open) v ceo i c = 1 ma, i b = 015v emitter-base voltage (collector open) v ebo i e = 10 a, i c = 07v collector-base cutoff current (emitter open) i cbo v cb = 15 v, i e = 0 0.1 a forward current transfer ratio * 1 h fe1 v ce = 2 v, i c = 0.5 a 200 800 ? h fe2 v ce = 2 v, i c = 1 a 60 collector-emitter saturation voltage * 1 v ce(sat)1 i c = 0.3 a, i b = 8 ma 0.2 v v ce(sat)2 i c = 0.7 a, i b = 8 ma 0.5 forward voltage * 2 v f i f = 0.55 a 1.4 v transition frequency f t v cb = 10 v, i e = ? 50 ma, f = 200 mhz 200 mhz collector output capacitance c ob v cb = 10 v, i e = 0, f = 1 mhz 10 pf (common base, input open circuited)
XN07651 3 sjj00243bed characteristics charts of tr1 common characteristics chart i c ? v ce i c ? i b v ce(sat) ? i c h fe ? i c c ob ? v cb p t ? t a 400 200 300 100 0 0 40 80 120 160 ambient temperature t a ( c) total power dissipation p t (mw) 0 06 24 0.6 0.5 0.4 0.3 0.2 0.1 t a = 25?c i b = 1 ma 0.3 ma 0.4 ma 0.5 ma 0.6 ma 0.7 ma 0.8 ma 0.9 ma 0.1 ma 0.2 ma collector current i c ( a ) collector-emitter voltage v ce ( v ) 0 1.2 1.0 0.8 0.6 0.4 0.2 v ce = 10 v t a = 25?c base current i b ( ma ) collector current i c ( a ) 06 24 i c / i b = 37.5 t a = 75 c 25 c ?5 c collector-emitter saturation voltage v ce(sat) ( v ) collector current i c ( a ) 10 ? 2 10 ? 3 10 ? 1 1 10 ? 2 10 ? 1 1 0 800 700 600 500 400 300 200 100 v ce = 2 v t a = 75 c 25 c ? 25 c forward current transfer ratio h fe collector current i c ( a ) 10 ? 3 10 ? 2 10 ? 1 1 1 0 10 2 10 10 20 f = 1 mhz t a = 25 c collector output capacitance (common base, input open circuited) c ob (pf) collector-base voltage v cb ( v )
XN07651 4 sjj00243bed characteristics charts of tr2 i c ? v ce v ce(sat) ? i c v be(sat) ? i c h fe ? i c c ob ? v cb 0 0 ? 6 ? 2 ? 4 ? 0.35 ? 0.30 ? 0.25 ? 0.20 ? 0.15 ? 0.10 ? 0.05 t a = 25?c i b = ? 10 ma ? 3 ma ? 4 ma ? 5 ma ? 6 ma ? 7 ma ? 8 ma ? 9 ma ? 1 ma ? 2 ma collector current i c ( a ) collector-emitter voltage v ce ( v ) i c / i b = 50 t a = 75 c 25 c ?5 c collector-emitter saturation voltage v ce(sat) ( v ) collector current i c ( a ) ? 10 ? 2 ? 10 ? 2 ? 10 ? 1 ? 1 ? 10 ? 1 ? 1 i c / i b = 50 75 c 25 c t a = ?5 c base-emitter saturation voltage v be(sat) ( v ) collector current i c ( a ) ? 10 ? 1 ? 10 ? 2 ? 1 ? 10 ? 10 ? 1 ? 1 0 ? 10 ? 3 400 350 300 250 200 150 100 50 ? 10 ? 2 ? 10 ? 1 ? 1 v ce = ? 2 v t a = 75 c 25 c ? 25 c forward current transfer ratio h fe collector current i c ( a ) 10 0 10 3 10 2 ? 4 ? 8 ? 12 ? 16 f = 1 mhz t a = 25 c collector output capacitance (common base, input open circuited) c ob (pf) collector-base voltage v cb ( v )
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